企业特殊行业经营资质信息公示
营业执照已认证 
点击图片查看原图VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2.0A = 80mΩ@TYP
RDS(ON), Vgs@2.5V, Ids@2.0A = 50mΩ@TYP
RDS(ON), Vgs@4.5V, Ids@2.8A = 40mΩ@TYP
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
SOT-23 Internal Schematic Diagram
Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise noted)
|
Parameter |
Symbol |
Limit |
Unit |
|
|
Drain-Source Voltage |
VDS |
20 |
V |
|
|
Gate-Source Voltage |
VGS |
±8 |
||
|
Continuous Drain Current |
ID |
2.3 |
A |
|
|
Pulsed Drain Current 1) |
IDM |
8 |
||
|
Maximum Power Dissipation |
TA=25℃ |
PD |
1.25 |
W |
|
TA=75℃ |
0.8 |
|||
|
Operating Junction and |
TJ, Tstg |
-55 to 150 |
℃ |
|
|
Junction-to-Ambient Thermal Resistance (PCB mounted)2) |
RθJA |
140 |
℃/W |
|
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
