嵌入式系统系列
我们的嵌入式系统符合JEDEC内存标准,并提供各种不同外观尺寸、容量、速度,以优化嵌入式系统的表现。
产品特色
- 1. Small Outline Dual In-line Memory Module
- 2. Fully Tested and Optimized for Stability and Performance
- 3. Uses Original IC to Meet Strict Industrial Standards
- 4. JEDEC Standard 1.5V (1.425V~1.575V) & 1.35V (1.28V~1.45V)
- 5. Operating Environment : 0°C ~ 85°C
- 6. RoHS Compliance
- 7. CE/FCC Certification
Overview:
DDR3 SODIMM内存(小外框)是一种紧凑的工业标准内存模块,可巧妙地安装在任何嵌入式、监控和自动化设置中。DDR3 SODIMM内存符合所有相关JEDEC标准,具有1GB、2GB、4GB和8GB容量,数据传输速率分别为1066MT/s、1333MT/s、1600MT/s和1866MT/s。
规格:
Interface | DDR3 |
bbbb Factor | SODIMM |
Data Rate | 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s |
Capacity | 1GB, 2GB, 4GB, 8GB |
Function | Non-ECC Unbuffered Memory |
Pin Number | 204pin |
bbbbb | 64Bits |
Voltage | 1.5V, 1.35V |
PCB Height | 1.18 Inches |
Operating Temperature | 0°C to 85°C |
产品料号:
Density | Component Composition | Part Number | Rank | Voltage | Description |
1GB | 128Mx16 | M3S0-1GSWFLQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
2GB | 256Mx16 | M3S0-2GSVFLQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
2GB | 256Mx8 | M3S0-2GSJCLQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 256Mx8 | M3S0-4GSJDLQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 256Mx16 | M3S0-4GSV0LQE | 2Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 512Mx8 | M3S0-4GSSCLQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
8GB | 512Mx8 | M3S0-8GSSDLQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 1866MT/s | 256Mx16 | 三星 | 2 | 2 | M3S0-4GSV0CQE |
4GB | 1600MT/s | 256Mx16 | 三星 | 2 | 2 | M3S0-4GSV0CPC |
4GB | 1333MT/s | 256Mx16 | 三星 | 2 | 2 | M3S0-4GSV0CN9 |
4GB | 1866MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0CQE |
4GB | 1600MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0CPC |
4GB | 1333MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0CN9 |
4GB | 1866MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDCQE |
4GB | 1600MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDCPC |
4GB | 1333MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDCN9 |
4GB | 1066MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDCM7 |
4GB | 800MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDCL6 |
4GB | 1866MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDCQE |
4GB | 1600MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDCPC |
4GB | 1333MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDCN9 |
4GB | 1866MT/s | 512Mx8 | 三星 | 1 | 2 | M3S0-4GSSCCQE |
4GB | 1600MT/s | 512Mx8 | 三星 | 1 | 2 | M3S0-4GSSCCPC |
4GB | 1333MT/s | 512Mx8 | 三星 | 1 | 2 | M3S0-4GSSCCN9 |
4GB | 1866MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCCQE |
4GB | 1600MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCCPC |
4GB | 1333MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCCN9 |
4GB | 1866MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDLQE |
4GB | 1600MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDLPC |
4GB | 1333MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDLN9 |
4GB | 1066MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDLM7 |
4GB | 800MT/s | 256Mx8 | 三星 | 2 | 2 | M3S0-4GSJDLL6 |
4GB | 1866MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDLQE |
4GB | 1600MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDLPC |
4GB | 1333MT/s | 256Mx8 | Micron | 2 | 2 | M3S0-4GMJDLN9 |
4GB | 1866MT/s | 256Mx16 | 三星 | 2 | 2 | M3S0-4GSV0LQE |
4GB | 1600MT/s | 256Mx16 | 三星 | 2 | 2 | M3S0-4GSV0LPC |
4GB | 1333MT/s | 256Mx16 | 三星 | 2 | 2 | M3S0-4GSV0LN9 |
4GB | 1866MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0LQE |
4GB | 1600MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0LPC |
4GB | 1333MT/s | 256Mx16 | Micron | 2 | 2 | M3S0-4GMV0LN9 |
4GB | 1866MT/s | 512Mx8 | 三星 | 1 | 2 | M3S0-4GSSCLQE |
4GB | 1600MT/s | 512Mx8 | 三星 | 1 | 2 | M3S0-4GSSCLPC |
4GB | 1333MT/s | 512Mx8 | 三星 | 1 | 2 | M3S0-4GSSCLN9 |
4GB | 1866MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCLQE |
4GB | 1600MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCLPC |
4GB | 1333MT/s | 512Mx8 | Micron | 1 | 2 | M3S0-4GMSCLN9 |