深圳市南山区嘉泰姆电子经营部 已通过实名认证

FEATURES

• OriginativeNew Design
• Superior Avalanche Rugged TechnologyRobust Gate Oxide Technology     
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 30 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V
• **** Avalanche Tested
   
  
  
  Absolute Maximum Ratings TC=25℃unless otherwise specified
  
  Electrical Characteristics TC=25 °Cunless otherwise specified
  Notes ;
• Repetitive Rating : Pulse width limited by maximum junction temperature
•  L=15.7mH, IAS=7.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
• ISD≤7.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
• Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
• Essentially Independent of Operating Temperature

 Package Dimension

                                                                  TO-220 (A)