DESCRIPTION:
These power transistors are produced by PPC\'s DOUBLEDIFFUSED PLANAR process. This technology produces highvoltage devices with excellent switching speeds, frequencyresponse, gain linearity, saturation voltages, high current gain,and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capabilityand inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, andthe hermetically sealed package insures maximum reliabilityand long life.
* Indicates JEDEC registered data.
FEATURES:
• High Voltage: 250 to 500V• High Current: 2 Amps• Fast Switching: tf < 3µsec.• Low VCE (SAT)
• High Power: 35 Watts




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